High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/μm: New HBr Pretreatment and Channel Engineering

High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al2O3 as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at Vds = 2.0 V with 5 nm Al2O3 as gate dielectric. Gm can be further improved to 1.3 mS/μm by reducing the gate oxide thickness to 2.5 nm at Vds = 1.6 V. HBr pre-treatment, retro-grade structure and halo-implantation processes are introduced for the first time into III-V MOSFET to further improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. The key transistor scaling metrics such as S.S., DIBL, VT of these treated devices are compared with the controlled devices with channel lengths from 250 nm to 150 nm.